Multicore Large-Scale Integration Lifetime Extension by Negative Bias Temperature Instability Recovery-Based Self-Healing

نویسندگان

  • Takashi Matsumoto
  • Hiroaki Makino
  • Kazutoshi Kobayashi
  • Hidetoshi Onodera
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Multi-core LSI Lifetime Extension by NBTI-Recovery-based Self-healing

1. Introduction Designing reliable systems has become more difficult in recent years. Besides conventional problems such as transistor leakage, the degradation and variation of transistor performance have a severe impact on the dependability of VLSI systems[1]-[3]. Negative-Bias-Temperature-Instability (NBTI) is one of the strongest reliability concerns for CMOS circuits[4][5]. Remarkable pheno...

متن کامل

Recovery-enhancing task scheduling for multicore processors under NBTI impact

Task scheduling for multicore processors typically has aimed at higher throughput and lower power consumption, but the lifetime reliability may be harmed if negative bias temperature instability is not considered together. In this letter, a task scheduling which extends lifetime is proposed. Cores are given the chance to recover as long as performance is not degraded. The degradation simulator ...

متن کامل

A 65nm CMOS 400ns Measurement Delay NBTI-Recovery Sensor by Minimum Assist Circuit

Designing reliable systems becomes more difficult in recent years. Besides conventional problems such as transistor leakage, degradation and variation of transistor performance have severe impact on the dependability of VLSI systems[1]-[3]. In this paper, we deal with negative bias temperature instability (NBTI) which is one of the strongest reliability concerns for digital and analog CMOS circ...

متن کامل

Impact of RTN and NBTI on Synchronous Circuit Reliability

We investigate a synchronous circuit reliability for 65nm−40nm CMOS technology. The impact of Random telegraph noise (RTN) and Negative Bias Temperature Instability (NBTI) on a circuit is evaluated. We found two things. (i) RTN at one or a few stages of a combinational circuit induces a large delay fluctuation under low voltage operation. (ii) LSI lifetime can be extended by utilizing NBTI reco...

متن کامل

Characterization of NBTI induced temporal performance degradation in nano-scale SRAM array using IDDQ

One of the major reliability concerns in nano-scale VLSI design is the time dependent Negative Bias Temperature Instability (NBTI) degradation. Due to the higher operating temperature and increasing vertical oxide field, threshold voltage (Vt) of PMOS transistors can increase with time under NBTI. In this paper, we examine the impact of NBTI degradation in memory elements of digital circuits, f...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2012